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 INTEGRATED CIRCUITS
DATA SHEET
SAA1502ATS Safety IC for Li-ion
Preliminary specification File under Integrated Circuits, IC11 1998 Jan 15
Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
FEATURES * Integrated power switches * Temperature protection * Zero voltage start-up * Discharge and charge overcurrent protection * Automatic release of current protection at removal of charger or load * Extremely low current consumption when battery voltage is lower than 2.3 V * Low current consumption in normal operation mode * Accurate voltage detection levels * Low resistance in current path * Able to accommodate 17.5 V charge voltage * Read out of charge disable status * Small package (SSOP16) * Low external components count * Continuous monitoring of the battery voltage and (dis)charge current. GENERAL DESCRIPTION
SAA1502ATS
The SAA1502ATS is manufactured in a Bipolar, CMOS and DMOS (BCD) Power Logic 70 process and is intended to be used as a protection circuit for single cell Li-ion battery packs. The current and voltage ratings are especially designed for use in battery packs for portable telephones such as GSM. The circuit monitors the battery voltage, current and temperature and will disconnect the battery in case of an overload situation: * Overdischarge protection prevents deep discharge of the cell; deep discharge of a Li-ion cell degrades the lifetime * Overcharge protection for safety reasons * Overcurrent protection on charge as well as discharge current rate * Temperature protection for preventing charge or discharge at high temperatures. It must be stated that the unit is a safety unit to be integrated inside a battery pack. It is not intended as an end of charge provision.
ORDERING INFORMATION TYPE NUMBER SAA1502ATS PACKAGE NAME SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 5.3 mm VERSION SOT338-1
1998 Jan 15
2
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dbook, full pagewidth
1998 Jan 15
ST 15 LEVEL SHIFTER VM VCC 2 Vref n.c. 1, 16 set temperature protection charge disable 4.18 V ESD 6.8 V 3.95 V VSS1 VSS2 14 3.6 V 5, 6 discharge enable charge enable
BLOCK DIAGRAM
Philips Semiconductors
Safety IC for Li-ion
Cext 3
SAA1502ATS
reset temperature protection CHARGE PUMP
Vref Vref Vcp
LEVEL SHIFTER LOGIC
3
LF 4, 13 2.3 V ESD Vref discharge disable SW2 7, 8, 9, 10 ESD ESD Vref Vref CURRENT PROTECTION Vd SW1 11, 12 VM
Preliminary specification
SAA1502ATS
MGM307
Fig.1 Block diagram.
Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
PINNING SYMBOL n.c. VCC Cext LF VSS2 Vd VM VSS1 ST PIN 1, 16 2 3 4, 13 5, 6 7, 8, 9, 10 11, 12 14 15 DESCRIPTION not connected positive battery sense input external delay capacitor leadframe connection control circuit negative battery input and power ground drain voltage of SW1 and SW2 negative sense input ground for the control circuit status output
handbook, halfpage
SAA1502ATS
n.c. 1 VCC 2 Cext 3 LF 4 VSS2 5 VSS2 6 Vd 7 Vd 8
MGM308
16 n.c. 15 ST 14 VSS1 13 LF
SAA1502ATS
12 VM 11 VM 10 Vd 9 Vd
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION Figure 3 gives the connection diagram of a Li-ion battery pack. All that is contained within the solid perimeter is the safety IC SAA1502ATS. It is a Multichip Module (MCM), containing two separate but interconnected chips, one is the control IC and the other contains two vertical power NMOS transistors which are connected in anti series. Both transistors have their backgate connected to their source, resulting in two backgate diodes in anti series. The basic function of the SAA1502ATS is to protect a single Li-ion cell against overcharge and overdischarge for reasons of lifetime and safety. The voltage across the cell terminals is monitored continuously and compared to an accurate internal reference voltage. For battery voltages between 3.6 and 4.18 V and a (dis)charge current below the current protection level, the safety unit is in normal operating mode (see Fig.4). In this state both switches are driven with an elevated supply voltage (with a charge pump) which guarantees a low resistance in the main current path. This is important for fully utilizing the high energy density of Li-ion battery technology. The discharge PowerMOS transistor SW2 is disabled to block further discharge, when the battery is discharged below 2.3 V. The battery voltage will increase stepwise, because of the sudden disconnection of the load. The unit will not re-enter the normal operation mode at this event
unless the battery voltage exceeds the voltage restarting level of 3.6 V. When no charger is present in the discharge inhibit mode, the system will switch to the Power-down mode. The current consumption of the unit (SAA1502ATS and the Li-ion cell) is then reduced to a typical value of 0.1 A for minimizing the discharge of the battery pack. Connecting a charger in the Power-down mode is detected by a voltage difference between VCC and VM of more than 3 V. The system will then return to the discharge inhibit mode. After a short transition phase characterized by conduction of the backgate diode between the drain and source leads of SW2, the system goes to the normal operating mode and SW2 is powered again. At zero voltage start-up, the system will start at the reset mode. A special circuit keeps the charge transistor SW1 on as much as possible. When the battery is charged to a voltage level of 4.18 V it will enter the charge inhibit mode and the charge PowerMOS transistor SW1 is switched off, disabling charging. Connecting a load is then detected by the reversal of the voltage across SW1 (Idch > 1.5 mA) and will immediately reactivate SW1, entering the discharge enable state.
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
A short time is needed to charge the gate of SW1. During this time the backgate diode between drain and source of SW1 conducts. The system will remain in the discharge enable mode unless: * The battery voltage drops below 3.95 V, which results in re-entering normal operation. This transition is not externally noticeable, because both switches remain low ohmic. * A charger is connected which will immediately deactivate SW1 if Ich > 280 mA. As an additional safety precaution also VCC > 4.18 V yields the same reaction, because a small current of a charger may be undetected with the condition of Ich > 280 mA, leading to overcharging the Li-ion cell. Current protection will deactivate both switches and is detected by a voltage drop or rise of VVM when both switches are activated. A release of this state can only be achieved by removing the load (or charger). The temperature protection overrules all other states and yields deactivation of both switches. This situation is activated at a junction temperature of 130 C and released at a junction temperature of 60 C. The temperature protection is followed by a return to its preceding mode. Normal mode In case of correct temperature, battery voltage and (dis)charge current, the system will be in the normal operation mode. Both the charge and discharge output will be active high, so both switches are conducting (SW1 = SW2 = 1). Discharge inhibit mode If the battery drops below 2.3 V, the system will switch to the discharge inhibit mode. In this mode only charging of the battery is allowed (SW1 = 1, SW2 = 0). The system will return to the normal operation mode as soon as the battery voltage will exceed 3.6 V, or by detection of a charge current. The overdischarge detection of 2.3 V has a delay of 40 ms typical. The voltage detection level 3.6 V has a delay of 50 ms typical. Because a charge current is necessary to increase the battery voltage, the system will normally switch to the normal operation mode at VCC = 2.3 V by detecting a charge current. But if the charge current is too small to detect, the 3.6 V detection is a backup. To prevent an instable situation between the normal operation and the discharge inhibit mode when the battery
SAA1502ATS
is charged at a voltage below 2.3 V, an extra condition of Vbat > 2.3 V is included going from the discharge inhibit to the normal operation mode. Power-down mode At low battery voltage the supply current is reduced to 100 nA for minimizing the discharge of the battery by the SAA1502ATS. At the Power-down mode all analog circuitry, except circuitry for detecting a charger present (VCC - VVM > 3 V), is disabled. The Power-down mode is entered when the system is in the discharge inhibit mode and no charger is present. The discharge inhibit mode will be entered again as soon as a charger is connected. The detection of a charger is accomplished by detecting a voltage difference of 3 V between VCC and VM. In this mode the voltage difference (see Fig.5) is: VCC - VVM = Vbat - VR1 + Vj(DO) + Vds(CO) Vbat + 0.6 V. So in the application the battery has to be charged in the Power-down mode until such a voltage that VCC - VVM = 3 V. Reset mode If the battery voltage is below 1.9 V, the system will be in the reset mode. Because in this mode the charge pump is disabled and battery charging should be possible, the charge FET is switched on with a reduced Vgs voltage. As soon as the battery voltage exceeds 2.25 V the system will switch to the discharge inhibit mode and the charge pump will be activated again. Zero voltage start-up The system has to be able to charge the battery at `0 Volt'. This means that when connecting a charger in case of a complete empty battery, the charge FET has to be active. In the reset mode the charge FET (SW1) is connected via a diode to VCC, so that the charge FET will be active when the VVM voltage is negative. The discharge inhibit mode will be entered as soon as a battery voltage exceeds 2.25 V. Charge inhibit mode If the battery voltage exceeds 4.18 V, the charge inhibit mode will be entered. At this mode the battery can only be discharged (SW1 = 0, SW2 = 1). The overcharge detection has a delay of 40 ms. This delay can be increased by an external capacitor. The delay time is then
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
defined as: td = 40 + (37 x Cext) [ms], with Cext in nF. The system will return to the normal operation mode from the charge inhibit mode when the battery voltage drops below 3.95 V. From the discharge enable mode the charge inhibit mode will also be entered as soon as a charge current is detected. Discharge enable mode When the system is in the charge inhibit mode, charging of the battery is disabled because switch SW1 is turned off. Discharge of the battery will then occur via the backgate diode of SW1. So the output voltage will be approximately 0.6 V lower and also dissipation of the backgate diode of SW1 occurs. It would be preferable to turn both switches on at that time without allowing charging of the battery until the battery voltage has dropped to 3.95 V. If a discharge current larger than 1.5 mA is detected in the charge inhibit mode, the system will activate the discharge enable mode, activating both switches. From the discharge enable mode the charge inhibit mode will be re-entered as soon as a charge current is detected larger than 280 mA or the battery voltage exceeds 4.18 V. The detection of a higher voltage than 4.18 V is a backup. If the battery is charged with a lower charge current than 280 mA, the system will not switch from the discharge enable mode to the charge inhibit mode. Eventually, if the battery is overcharged because of a small charge current, the battery voltage will exceed 4.18 V and the system will switch to the charge inhibit mode. The system will return to the normal operation mode from the discharge enable mode when the battery voltage drops below 3.95 V. If the system is in the charge inhibit mode, it will mostly go to the normal mode via the discharge enable mode. But if the system is in the charge inhibit state and the system is stored for several years, the battery voltage can drop because of the battery discharge by the SAA1502ATS and the self-discharge of the battery. So a voltage drop of the battery is possible, without detecting a discharge current. Because of this, the normal operation mode should also be entered from the charge inhibit state when the battery voltage is below 3.95 V and not only from the discharge enable mode. In this way, charging a battery is always possible if the battery voltage is below 3.95 V. Temperature protection
SAA1502ATS
Internally the system will switch between the different modes as given in the state diagram, independent of the temperature. As the junction temperature exceeds 130 C, the output signals will be overruled and switched to zero (SW1 = SW2 = 0). The supply current will be reduced to approximately 100 nA when the Power-down or reset mode is activated. In these modes the temperature protection is deactivated. When the junction temperature drops below 60 C, the output signals will not be overruled any more. Overcurrent protection When the (dis)charge current exceeds the specified maximum value, the current protection mode is entered. An extra condition of SW1 = SW2 = 1 is necessary because of the next situation: If the system is in the discharge inhibit and a charge current is detected (e.g. VVM = -0.6 V) the normal operation mode will be entered. Because of a minimum time in which the gate capacitors have to be charged, the VVM voltage will be -0.6 V for a short period, when the system is already in the normal operation mode. A VVM voltage of -0.6 V could also occur when the system is charged with current exceeding the maximum charge current. To prevent that a maximum charge current is detected when coming from the discharge inhibit state, the system waits until both SW1 and SW2 are fully charged before a maximum (dis)charge current is detected. So the voltages at SW1 and SW2 are measured to be sure that the normal operation mode is stabilized before the current protection mode can be entered. The same applies when entering the discharge enable state from the charge inhibit state by detecting a discharge current. The delay of the current protection as function of the (dis)charge current is given in Fig.8.
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SAA1502ATS
handbook, full pagewidth
Cext 3 1 k 0.22 F VCC 2 CONTROL CIRCUIT DO SW2 CO SW1 VM
charger/load
VSS1 14
Vbat
VSS2 5, 6
SAA1502ATS
7, 8, 9, 10 Vd
11, 12 VM
15 ST
MGM309
charger/load
Fig.3 Connection diagram.
handbook, full pagewidth
current protection SW1, SW2
Idch or Ich > Iprot no charger/load
discharge enable SW1, SW2
VCC > 4.18 V or Ich > 280 mA Idch > 1.5 mA VCC > 4.18 V
charge inhibit SW1, SW2
VCC < 3.95 V VCC < 3.95 V current protection SW1, SW2 Idch or Ich > Iprot no charger/load normal operation SW1, SW2 VCC < 2.3 V VCC > 3.6 V or (Ich > 1.5 mA and VCC > 2.3 V) no charger present power down SW1, SW2 charger present
discharge inhibit SW1, SW2
from all states (except from power down and reset) Tstart(prot) 130 C
back to previous state Trel(prot) < 60 C from all states VCC < 1.9 V
VCC > 2.25 V
temperature protection SW1, SW2
reset SW1, SW2
MGM310
Fig.4 Flow diagram.
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SAA1502ATS
handbook, full pagewidth
Vbat + Vbat -
R1 VCC CONTROL CIRCUIT s d d SW1 s g
MGM311
C1
CHARGER
+ Vj(DO) - + Vds(CO) -
g SW2
DO CO
VM
Fig.5 Circuit diagram of charging a Li-ion pack.
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
TIMING DIAGRAM This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
SAA1502ATS
normal operation load present
discharge enable no charger; no load
current protection load present Idch > Iprot load present no charger; no load discharge enable charge inhibit td
tec(det)
tec(rel)
charger present
normal operation no charger; no load
current protection
charger present Ich > Iprot td
MGM315
via discharge inhibit to normal operation
charger present
dbook, full pagewidth inhibit via discharge
no charger; no load
to power down
normal operation
discharge enable charge inhibit tec(rel) discharge enable
ted(det)
load present
no charger; no load charger present no charger; no load load present no charger; no load
charge inhibit
normal operation
tec(det)
charger present
reset off 4.18 3.95 3.6 2.3 2.25 SW1 on SW2 on off +Vdiode -Vdiode Vbat 0
Vbat
1998 Jan 15
9
VM
Vbat - Vcharger
discharge inhibit
Fig.6 Timing diagram.
Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SAA1502ATS
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages with respect to pin VSS2. SYMBOL VCC VCC(clamp) ICC VVM VST IRpath Tamb Tstg IVSS-VM PARAMETER positive battery sense input voltage VCC clamping voltage maximum current through the VCC clamp negative sense input voltage status output voltage current through SW1 and SW2 operating ambient temperature storage temperature maximum body diode current (DC value) CONDITIONS DC constant t < 60 ms and ICC = 7 mA - - VVM - -25 -55 - MIN. -0.3 MAX. +4.5 8.5 7 VCC 27 +80 +150 800 UNIT V V mA V V A
C C
VCC - 17.5 VCC
mA
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-pin) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to pin CONDITIONS in free air VALUE 165 22 UNIT K/W K/W
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
CHARACTERISTICS Tj = 25 C; all voltages with respect to VSS2; positive currents flow into the IC. SYMBOL Supply behaviour VCC ICC Iq VCC-VVM positive battery sense input voltage supply current quiescent current minimum charge voltage VCC = 4.0 V; -13.5 V VVM 0 Power-down/reset mode (VCC = 2.0 V) at zero charge 0 4.0 0.03 1.8 PARAMETER CONDITIONS MIN.
SAA1502ATS
TYP. - 7.0 0.1 2.4
MAX.
UNIT
4.5 10 0.3 3.0
V A A V
Voltage detection Vec(det) excess charge detection voltage measured at terminals of the battery and Tj = 25 C measured at terminals of the battery and Tj = -5 to +55 C tec(det) Vec(rel) tec(rel) Ved(det) ted(det) Ved(rel) ted(rel) excess charge delay time Vec(det) excess charge release voltage excess charge delay time Vec(rel) excess discharge detection voltage excess discharge delay time Ved(det) excess discharge release voltage excess discharge delay time Ved(rel) charge inhibit state discharge enable state discharge inhibit state VVM negative sense input voltage discharge inhibit state; no charge current current protection mode no load detection no charger detection VCC-VVM VCC td(on) td(off) charge present detection voltage positive battery sense input voltage switch-on delay time SW1/SW2 switch-off delay time SW1/SW2 Power-down mode start of reset mode excess of reset mode VCC = 4.0 V VCC = 4.0 V 70 -7 2.4 1.7 2.05 - - 90 -12 3.0 1.9 2.25 100 100 120 -20 3.6 2.1 2.45 - - mV mV V V V s s Cext not connected Cext = 33 nF (10%) 4.15 4.145 20 0.5 3.82 25 2.2 20 3.3 25 0.05 150 0.05 -7 4.18 4.18 40 1.25 3.95 50 2.3 40 3.6 50 1.5 280 1.5 -12 4.20 4.21 60 2 4.08 75 2.4 60 3.9 75 37.5 475 37.5 -20 V V ms s V ms V ms V ms mA mA mA mV
IVSS-VM (dis)charge current detection
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SAA1502ATS
SYMBOL Power transistors Rpath
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
main current path resistance
VCC = 2.5 V; IVSS-VM = 2 A VCC = 4.0 V; IVSS-VM = 2 A
52 48
66 60
80 72
m m
SW1 transistor Rpath(SW1) current path resistance SW2 transistor Rpath(SW2) current path resistance Temperature protection Tstart(prot) Trel(prot) start of the temperature protection release of the temperature protection 120 50 130 60 140 70 C C VCC = 2.5 V; IVSS-VM = 2 A VCC = 4.0 V; IVSS-VM = 2 A 26 24 33 30 40 36 m m VCC = 2.5 V; IVSS-VM = 2 A VCC = 4.0 V; IVSS-VM = 2 A 26 24 33 30 40 36 m m
Current detection at VCC = 4 V; see Fig.8 Iprot(min) td td(min) IST minimum current protection level delay time at Iprot = 8 A minimum delay time ST = 1; VCC - VVM = 17.5 V; VST - VVM = 0.5 V ST = 1; VCC - VVM = 4 V; VST - VVM = 0.5 V VST output voltage ST = 1; IST = 40 A; VCC - VVM = 17.5 V ST = 1; IST = 10 A; VCC - VVM = 4 V Table 1 Functional table of the status output (ST); note 1 CONDITIONS Normal operation Charge inhibit Discharge enable Discharge inhibit Power-down Current protection Temperature protection Note 1. At which: `0' is active off, and `1' is active on. OUTPUT 0 1 0 0 0 1 1 DC level 3.5 2 190 5 20 - - - - - 7 200 430 A ms s A A V V
Status; see Table 1 and Fig.7 output current 40 10 - - 200 100 0.5 0.5
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SAA1502ATS
handbook, full pagewidth
MGM313
VST - VVM (V) VCC - VVM = 4 V VCC - VVM = 17.5 V 0.5
10
40
IST (A)
Fig.7 Status output current at different charge voltages.
102 handbook, halfpage td (s) 10
MGM312
1
10-1
10-2
max
max
10-3
typ
min
min
typ
10-4 25 Ich (A)
15
5
0
5
15 25 Idch (A)
Fig.8 Current protection delay.
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
APPLICATION INFORMATION
SAA1502ATS
handbook, full pagewidth
B+
(charger/load)
+
R1 1 k VCC C1 1 F Li-ion
n.c. VCC Cext
1 2 3 4 5 6 7 8
16 15 14 13
n.c. ST VSS1 LF VM VM Vd Vd
R2 10 M
C4 100 nF ST
C2
33 nF
C3 100 nF
LF
VSS1
VSS2 VSS2 Vd Vd
SAA1502ATS
12 11 10 9
B-
B-' (sense)
VM (sense)
MGM314
(charger/load)
-
Fig.9 Connection diagram application board.
handbook, full pagewidth
30
PHILIPS
1 C3 C4 R2 R1 6
C2 C1
B+
PHILIPS
+
ST VSS1
SAA1502
-
VM B-' VCC
B-
MGM316
Dimensions in mm.
Fig.10 Application printed-circuit board.
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
PACKAGE OUTLINE SSOP16: plastic shrink small outline package; 16 leads; body width 5.3 mm
SAA1502ATS
SOT338-1
D
E
A X
c y HE vM A
Z 16 9
Q A2 pin 1 index Lp L 1 bp 8 wM detail X A1 (A 3) A
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 6.4 6.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 1.00 0.55 8 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT338-1 REFERENCES IEC JEDEC MO-150AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 94-01-14 95-02-04
1998 Jan 15
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
SAA1502ATS
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
SAA1502ATS
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
NOTES
SAA1502ATS
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Philips Semiconductors
Preliminary specification
Safety IC for Li-ion
NOTES
SAA1502ATS
1998 Jan 15
19
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
297027/1200/01/pp20
Date of release: 1998 Jan 15
Document order number:
9397 750 02706


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